MEASUREMENT OF STEADY-STATE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED N-TYPE SILICON

被引：54

作者：

DELALAMO, JA ^{[1
]}

SWANSON, RM ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE ELECTR LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期

关键词：

D O I：

10.1109/T-ED.1987.23122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1580 / 1589

页数：10

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