METHOD FOR SIMULTANEOUS MEASUREMENT OF DIFFUSIVITY, LIFETIME, AND DIFFUSION LENGTH, WITH APPLICATION TO HEAVILY DOPED SILICON

被引：12

作者：

MISIAKOS, K

WANG, CH

NEUGROSCHEL, A

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 113

页数：3

共 8 条

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[7] MEASUREMENT OF HOLE MOBILITY IN HEAVILY DOPED N-TYPE SILICON [J].

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[8] RESISTIVITY-DOPANT DENSITY RELATIONSHIP FOR PHOSPHORUS-DOPED SILICON [J].

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