MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZN1-XCDXSE ON INP SUBSTRATES

被引：27

作者：

DAI, N

CAVUS, A

DZAKPASU, R

TAMARGO, MC

SEMENDY, F

BAMBHA, N

HWANG, DM

CHEN, CY

机构：

[1] USA,RES LAB,FT BELVOIR,VA 22060

[2] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期

关键词：

D O I：

10.1063/1.113694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality, lattice matched Zn1-xCdxSe has been grown on InP substrates by molecular beam epitaxy. The quality of the epilayers was monitored by reflection high energy electron diffraction, and by low temperature photoluminescence and transmission electron microscopy (TEM). The use of an As flux during the pregrowth substrate treatment followed by a low initial growth temperature were needed to optimize the growth. TEM images of samples grown under these conditions show abrupt interfaces and good crystalline quality. Epilayers exhibit excellent optical properties, indicated by a very narrow, high intensity near-band-edge excitonic emission peak (full width at half maximum of 10 meV), and almost negligible deep level emission.© 1995 American Institute of Physics.

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页码：2742 / 2744

页数：3

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