A DLTS ANALYSIS OF ELECTRON AND HOLE TRAPS IN PROTON IMPLANTED VPE GROWN N-GAAS USING SCHOTTKY-BARRIER DIODES

被引：5

作者：

AURET, FD

NEL, M

SNYMAN, HC

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1988年 / 105卷 / 3-4期

关键词：

D O I：

10.1080/00337578808229949

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：225 / 237

页数：13

共 28 条

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