RELIABILITY STUDIES ON 2-LEVEL AL-SIO2-AL SYSTEM

被引：7

作者：

GHATE, PB ^{[1
]}

GARDNER, WR ^{[1
]}

CROSTHWAIT, DL ^{[1
]}

机构：

[1] TEXAS INSTR INC, SEMICOND RES & DEV LABS, DALLAS, TX 75222 USA

来源：

IEEE TRANSACTIONS ON RELIABILITY | 1973年 / R-22卷 / 04期

关键词：

D O I：

10.1109/TR.1973.5215889

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：186 / 195

页数：10

共 20 条

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ATTARDO, MJ ;

ROSENBERG, R .

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[2] STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J].

ATTARDO, MJ ;

RUTLEDGE, R ;

JACK, RC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4343-&

[3] CORRELATION BETWEEN RESISTANCE RATIOS AND ELECTROMIGRATION FAILURE IN ALUMINUM FILMS [J].

AUSTIN, PM ;

MAYADAS, AF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (04) :606-&

[4] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].

BLACK, JR .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&

[5] ELECTROMIGRATION-INDUCED FAILURES IN, AND MICROSTRUCTURE AND RESISTIVITY OF, SPUTTERED GOLD FILMS [J].

BLAIR, JC ;

GHATE, PB ;

FULLER, CR ;

HAYWOOD, CT .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :307-&

[6] ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS [J].

BLAIR, JC ;

GHATE, PB ;

HAYWOOD, CT .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :281-&

[7]

BLAIR JC, 1969, FAL AIME M, P213

[8]

BLAIR JC, 1970, APPL PHYS LETT, V17, P541

[9]

BLAIR JC, 1971, 1971 WESCON TECH PAP, V15, P1

[10] ELECTROMIGRATION IN THIN AL FILMS [J].

BLECH, IA ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :485-&

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