VALENCE-BAND OFFSET AND INTERFACE CHEMISTRY OF CDS/INP(110)

被引:40
作者
WILKE, WG [1 ]
SEEDORF, R [1 ]
HORN, K [1 ]
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584605
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:807 / 814
页数:8
相关论文
共 39 条
[31]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[32]   BAND LINEUPS AT II-VI HETEROJUNCTIONS - FAILURE OF THE COMMON-ANION RULE [J].
TERSOFF, J .
PHYSICAL REVIEW LETTERS, 1986, 56 (25) :2755-2758
[33]   THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES [J].
TERSOFF, J .
PHYSICAL REVIEW B, 1984, 30 (08) :4874-4877
[34]   THEORETICAL-STUDY OF BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].
VAN DE WALLE, CG ;
MARTIN, RM .
PHYSICAL REVIEW B, 1987, 35 (15) :8154-8165
[35]   PARA-INP-NORMAL-CDS SOLAR CELLS AND PHOTOVOLTAIC DETECTORS [J].
WAGNER, S ;
SHAY, JL ;
BACHMANN, KJ ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1975, 26 (05) :229-230
[36]   VALENCE-BAND OFFSET AND INTERFACE FORMATION IN ZNTE/GASB(110) STUDIED BY PHOTOEMISSION USING SYNCHROTRON RADIATION [J].
WILKE, WG ;
HORN, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1211-1218
[37]  
WILKE WG, IN PRESS PHYS REV B
[38]   INTERFACE POTENTIAL CHANGES AND SCHOTTKY BARRIERS [J].
ZHANG, SB ;
COHEN, ML ;
LOUIE, SG .
PHYSICAL REVIEW B, 1985, 32 (06) :3955-3957
[39]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF THE AL-GAAS(110) INTERFACE [J].
ZHANG, SB ;
COHEN, ML ;
LOUIE, SG .
PHYSICAL REVIEW B, 1986, 34 (02) :768-772