ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE WITH THE USE OF ATOMIC-HYDROGEN

被引：15

作者：

DEKEIJSER, M

VANOPDORP, C

机构：

[1] Philips Research Laboratories

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolayer atomic layer epitaxy of GaAs has been achieved between 430 and 500-degrees-C by using alternating pulses of AsH3, Ga(CH3)3, and atomic hydrogen. Maintaining the susceptor temperature below 500-degrees-C suppresses the unfavorable thermal decomposition of Ga(CH3)3 to Ga in the gas phase. The basic point of our growth method is that, notwithstanding these low temperatures, sufficiently fast surface kinetics for growth are maintained by activation with the atomic hydrogen pulses.

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页码：1187 / 1189

页数：3

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