TUNNELING IN MIS STRUCTURES .2. EXPERIMENTAL RESULTS ON M-SIO2-SI

被引：24

作者：

WAXMAN, A

SHEWCHUN, J

WARFIELD, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1101(67)90060-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1187 / &

共 11 条

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[8] TUNNELING IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURE .I. SILICON-SILICON DIOXIDE .2. THIN FILM ALAL2O3-CDS AND AL-AL2O3-CDSE [J].

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[9] AUTOMATIC PLOTTING OF CONDUCTANCE AND CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES OR ANY 2 TERMINAL COMPLEX ADMITTANCE [J].

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[10]

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