RESONANT TUNNELING THROUGH LANDAU-LEVELS IN QUANTUM-WELLS IN THE PRESENCE OF INELASTIC-SCATTERING BROADENING

被引：21

作者：

SCHULZ, PA

TEJEDOR, C

机构：

[1] Departamento de Física de la Materia Condensada (C-XII), Universidad Autnoma de Madrid, Ciudad Universitària de Canto Blanco

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.41.3053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated, within the effective-mass approximation, the current-density voltage and current-density magnetic-field characteristics of AlxGa1-xAs/GaAs double-barrier quantum-well systems, in the presence of a magnetic field parallel to the current. Inelastic-scattering broadening is included by means of a simple model. This new picture of the problem is able to explain the disagreements between experimental results and previous calculations. © 1990 The American Physical Society.

引用

页码：3053 / 3059

页数：7

共 24 条

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