SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS

被引：32

作者：

AUBRY, V ^{[1
]}

MEYER, F ^{[1
]}

WARREN, P ^{[1
]}

DUTARTRE, D ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky barrier height of W on p-type Si1-xGex/Si has been investigated as a function of composition (10% less-than-or-equal-to x less-than-or-equal-to 33%) and Si1-xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.

引用

页码：2520 / 2522

页数：3

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