SI-SIO2 INTERFACE STRUCTURES - CHEMICAL-SHIFTS IN SI 2P PHOTOELECTRON-SPECTRA

被引：29

作者：

YAMAGISHI, H ^{[1
]}

KOIKE, N ^{[1
]}

IMAI, K ^{[1
]}

YAMABE, K ^{[1
]}

HATTORI, T ^{[1
]}

机构：

[1] TOSHIBA CORP, VLSI RES CTR, SAIWAI KU, KAWASAKI 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期

关键词：

D O I：

10.1143/JJAP.27.L1398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L1398 / L1400

页数：3

相关论文

共 11 条

[1] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
GRUNTHANER, FJ
GRUNTHANER, PJ
VASQUEZ, RP
LEWIS, BF
MASERJIAN, J
MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686
[2] THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE
GRUNTHANER, PJ
HECHT, MH
GRUNTHANER, FJ
JOHNSON, NM
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 629 - 638
[3] THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES
HAHN, PO
HENZLER, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02): : 574 - 583
[4] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE
HAIGHT, R
FELDMAN, LC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4884 - 4887
[5] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
HATTORI, T
SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472
[6] HATTORI T, 1984, AIP C P, V122, P45
[7] HATTORI T, 1988, IN PRESS 1988 P S PH
[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION
HOLLINGER, G
HIMPSEL, FJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95
[9] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
IRENE, EA
TIERNEY, E
ANGILELLO, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597
[10] PANTELIDES ST, 1978, PHYSICS SIO2 ITS INT, pCH7