MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUM

被引：11

作者：

RIEDER, G

HENISCH, HK

RAHIMI, S

MANIFACIER, JC

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] UNIV MONTPELLIER 2,CTR ETUDES ELECTR SCI,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.21.723

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：723 / 729

页数：7

共 12 条

[1] CARRIER INJECTION AND EXTRACTION IN LEAD SULPHIDE [J].

BANBURY, PC .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (397) :50-53

[2] THEORY OF THE FORWARD CHARACTERISTIC OF INJECTING POINT CONTACTS [J].

BANBURY, PC .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406) :833-840

[3] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS [J].

BARDEEN, J .

BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :469-495

[4] CHARACTERISTICS OF INJECTING POINT CONTACTS ON SEMICONDUCTORS .2. UNDER ILLUMINATION [J].

BRAUN, I ;

HENISCH, HK .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1111-&

[5] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (05) :835-843

[6] CARRIER CONCENTRATION DISTURBANCES IN SEMICONDUCTORS [J].

LOW, GGE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (05) :310-314

[7] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS [J].

MANIFACIER, JC ;

HENISCH, HK .

PHYSICAL REVIEW B, 1978, 17 (06) :2640-2647

[8]

MANIFACIER JC, UNPUBLISHED

[9] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J].

SCHARFETTER, DL .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :299-+

[10] HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].

SHOCKLEY, W ;

PEARSON, GL ;

HAYNES, JR .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366

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