INTERMEDIATE OXIDE FORMATION IN DOUBLE-POLYSILICON GATE MOS STRUCTURE

被引：24

作者：

SUNAMI, H

KOYANAGI, M

HASHIMOTO, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 11期

关键词：

D O I：

10.1149/1.2129503

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2499 / 2506

页数：8

共 22 条

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