FABRICATION OF NB/AL,ALOX/AL/NB JOSEPHSON TUNNEL-JUNCTIONS USING REACTIVE ION ETCHING IN SF6

被引：13

作者：

ADELERHOF, DJ ^{[1
]}

BIJLSMA, ME ^{[1
]}

FRANSEN, PBM ^{[1
]}

WEIMAN, T ^{[1
]}

FLOKSTRA, J ^{[1
]}

ROGALLA, H ^{[1
]}

机构：

[1] PHYS TECH BUNDESANSTALT, W-3300 BRAUNSCHWEIG, GERMANY

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1993年 / 209卷 / 04期

关键词：

D O I：

10.1016/0921-4534(93)90563-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality Nb/Al,AlO(x)/Al/Nb Josephson tunnel junctions have been made with the help of a fabrication process based on reactive ion etching of Nb in SF6. The V(m) value of these junctions is typically 60-70 mV at 4.2 K. At 1.6 K, a V(m) of 4.1 V has been measured, which is the highest value that has ever been reported for this type of junction. The area of the junctions ranges from 1 to 25 mum2. By burying the Nb/Al,AlO(x)/Al/Nb trilayer in the substrate, a planarized junction configuration has been obtained. Reactive ion etching of Nb in SF6 plasmas has been studied in detail. Anisotropic etch profiles can be obtained because of the formation of a resistant layer during etching, which prevents etching of Nb under the photoresist. The etching process has been monitored with a spectrometer. The fluorine emission at 703.7 nm is shown to be suitable for end point detection.

引用

页码：477 / 485

页数：9

共 28 条

[1] CHARACTERIZATION OF DIFFERENT TYPES OF NB-ALOX BASED JOSEPHSON TUNNEL-JUNCTIONS [J].

ADELERHOF, DJ ;

HOUWMAN, EP ;

FRANSEN, PBM ;

VELDHUIS, D ;

FLOKSTRA, J ;

ROGALLA, H .

IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :3153-3156

[2]

ADELERHOF DJ, 1992, 4TH P INT C SQUID 91, P203

[3] NB/ALOX/NB TRILAYER PROCESS FOR THE FABRICATION OF SUBMICRON JOSEPHSON-JUNCTIONS AND LOW-NOISE DC SQUIDS [J].

BHUSHAN, M ;

MACEDO, EM .

APPLIED PHYSICS LETTERS, 1991, 58 (12) :1323-1325

[4] ABSOLUTE CROSS-SECTIONS FOR FLUORINE 3P-]3S LINE EMISSIONS FOLLOWING SINGLE ELECTRON-IMPACT ON NF3, CF4, AND SF6 [J].

BLANKS, KA ;

TABOR, AE ;

BECKER, K .

JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (09) :4871-4875

[5] OPTICAL-DETECTION OF CORONA DISCHARGES IN SF6, CF4, AND SO2 UNDER DC AND 50-HZ AC VOLTAGES [J].

CASANOVAS, AM ;

CASANOVAS, J ;

DUBROCA, V ;

LAGARDE, F ;

BELARBI, A .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1220-1226

[6] SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SI AND SIO2 AND THE MECHANISM OF GAS-SURFACE INTERACTIONS [J].

FIELD, D ;

HYDES, AJ ;

KLEMPERER, DF .

VACUUM, 1984, 34 (05) :563-578

[7] A NOVEL MODULATION TECHNIQUE FOR 1/F NOISE-REDUCTION IN DC SQUIDS [J].

FOGLIETTI, V ;

GALLAGHER, WJ ;

KOCH, RH .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1150-1153

[8] REACTIVE ION ETCHING OF NIOBIUM [J].

FOXE, TT ;

HUNT, BD ;

ROGERS, C ;

KLEINSASSER, AW ;

BUHRMAN, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1394-1397

[9]

FROMKNECHT R, 1985, SQUID 85, P659

[10] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].

GURVITCH, M ;

WASHINGTON, MA ;

HUGGINS, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474

← 1 2 3 →