SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SI AND SIO2 AND THE MECHANISM OF GAS-SURFACE INTERACTIONS

被引：24

作者：

FIELD, D

HYDES, AJ

KLEMPERER, DF

机构：

来源：

VACUUM | 1984年 / 34卷 / 05期

关键词：

D O I：

10.1016/0042-207X(84)90379-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：563 / 578

页数：16

共 51 条

[1]

BEENAKER CIM, 1979, 4 C P INT S PLASM CH, P125

[2]

BRODIE I, 1982, PHYSICS MICROFABRICA

[3]

BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[4]

Chapman B., 1980, GLOW DISCHARGE PROCE

[5] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J].

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2614-2619

[6]

CIRACI S, 1975, PHYS REV B, V12, P5812

[7]

Coburn J., 1982, AM VACUUM SOC MONOGR

[8] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

COBURN, JW ;

WINTERS, HF ;

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540

[9] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[10] END-POINT DETERMINATION OF ALUMINUM CCL4 PLASMA ETCHING BY OPTICAL EMISSION-SPECTROSCOPY [J].

CURTIS, BJ ;

BRUNNER, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :829-830

← 1 2 3 4 5 6 →