CIRCULAR STACKING-FAULTS IN SILICON

被引：24

作者：

TICE, WK

HUANG, TC

机构：

[1] IBM CORP,SYST PROD DIV,ESSEX JUNCTION,UT 05452

[2] IBM CORP,RES DIV,SAN JOSE,CA 95193

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 04期

关键词：

D O I：

10.1063/1.1655133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：157 / 158

页数：2

共 8 条

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[3] ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].

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[4] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].

HSIEH, CM ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1302-1306

[5]

IIZUKA T, 1968, LATTICE DEFECTS SEMI

[6] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J].

JOSHI, ML .

ACTA METALLURGICA, 1966, 14 (10) :1157-&

[7]

SHIRAKI H, 1971, NEC RES DEV, P31

[8] PARTIAL DISLOCATIONS ASSOCIATED WITH NBC PRECIPITATION IN AUSTENITIC STAINLESS STEELS [J].

SILCOCK, JM ;

TUNSTALL, WJ .

PHILOSOPHICAL MAGAZINE, 1964, 10 (105) :361-&

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