ONE-MICRON POLYCIDE (WSI2 ON POLY-SI) - MOSFET TECHNOLOGY

[1] BENNETT RS, 1981, EL SOC EXT ABSTR, P570

[2] BONDAR JA, 1978, ELECTROCHEMICAL SOC, P760

[3] CHANG THP, 1976, ELECTRON ION BEAM SC, P392

[4] Chao H. H., 1981, 1981 IEEE International Solid-State Circuits Conference. Digest of Papers, P152

[5] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[6] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[7] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428

[8] EPRATH LM, 1980, 1980 INT EL DEV M WA, P402

[9] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368

[1] BENNETT RS, 1981, EL SOC EXT ABSTR, P570

[2] BONDAR JA, 1978, ELECTROCHEMICAL SOC, P760

[3] CHANG THP, 1976, ELECTRON ION BEAM SC, P392

[4] Chao H. H., 1981, 1981 IEEE International Solid-State Circuits Conference. Digest of Papers, P152

[5] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[6] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[7] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428

[8] EPRATH LM, 1980, 1980 INT EL DEV M WA, P402

[9] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368