SELF-LIMITING MONOLAYER EPITAXY OF WIDE GAP II-VI SUPERLATTICES

被引:13
作者
FASCHINGER, W
JUZA, P
FERREIRA, S
ZAJICEK, H
PESEK, A
SITTER, H
LISCHKA, K
机构
[1] UNIV LINZ,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA
[2] UNIV LINZ,FORSCHUNGSINST OPTOELEKTR,A-4040 LINZ,AUSTRIA
[3] INST PESQUISAS ESPACIASIS,BR-12201 S JOSE CAMPO,SP,BRAZIL
关键词
D O I
10.1016/0040-6090(93)90168-O
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a novel growth technique for the preparation of wide gap II-VI compounds and heterostructures, self-limiting monolayer epitaxy (SME). The basic idea of SME is that atoms physisorbed on top of an atomically flat surface are more loosely bound than atoms incorporated into a completed monolayer. Thus one expects eventual re-evaporation of the material which has been deposited in excess to complete monolayers, leading to a two-dimensional and self-limiting growth process. ZnS epitaxial layers and ZnSe/CdSe superlattices were grown on GaAs substrates using the SME technique, giving evidence for the self-limiting behaviour of this growth process. The superlattices grown using this method are of very good quality, as revealed by high-resolution X-ray diffraction and photoluminescence measurements.
引用
收藏
页码:270 / 274
页数:5
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