ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS

[41] DEEP LEVELS PRODUCED BY PAIRS OF IMPURITIES IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5139 - 5142

[42] ELECTRONIC-ENERGY LEVELS OF SUBSTITUTIONAL DEFECT PAIRS IN SI [J]. PHYSICAL REVIEW B, 1982, 26 (06): : 3243 - 3248

[43] SPAETH JM, 1985, MATER RES SOC S P, V46, P185

[44] SPAETH JM, UNPUB

[45] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6448 - 6451

[46] SPECTRAL DISTRIBUTIONS OF PHOTOQUENCHING RATE AND MULTIMETASTABLE STATES FOR MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 69 - 71

[47] HIGH-PURITY LEC GROWTH AND DIRECT IMPLANTATION OF GAAS FOR MONOLITHIC MICROWAVE CIRCUITS [J]. SEMICONDUCTORS AND SEMIMETALS, 1984, 20 : 1 - 87

[48] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[49] PRECIPITATE-LIKE ZONES IN AS-GROWN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3689 - 3689

[50] VANVECHTEN JA, 1984, J PHYS C SOLID STATE, V17, pL933, DOI 10.1088/0022-3719/17/35/001

[41] DEEP LEVELS PRODUCED BY PAIRS OF IMPURITIES IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5139 - 5142

[42] ELECTRONIC-ENERGY LEVELS OF SUBSTITUTIONAL DEFECT PAIRS IN SI [J]. PHYSICAL REVIEW B, 1982, 26 (06): : 3243 - 3248

[43] SPAETH JM, 1985, MATER RES SOC S P, V46, P185

[44] SPAETH JM, UNPUB

[45] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6448 - 6451

[46] SPECTRAL DISTRIBUTIONS OF PHOTOQUENCHING RATE AND MULTIMETASTABLE STATES FOR MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 69 - 71

[47] HIGH-PURITY LEC GROWTH AND DIRECT IMPLANTATION OF GAAS FOR MONOLITHIC MICROWAVE CIRCUITS [J]. SEMICONDUCTORS AND SEMIMETALS, 1984, 20 : 1 - 87

[48] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[49] PRECIPITATE-LIKE ZONES IN AS-GROWN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3689 - 3689

[50] VANVECHTEN JA, 1984, J PHYS C SOLID STATE, V17, pL933, DOI 10.1088/0022-3719/17/35/001