PARA-TYPE IN P-LANGMUIR FILM MIS DIODES

被引：8

作者：

SYKES, RW ^{[1
]}

ROBERTS, GG ^{[1
]}

FOK, T ^{[1
]}

CLARK, DT ^{[1
]}

机构：

[1] UNIV DURHAM,DEPT CHEM,SCI LABS,DURHAM DH1 3LE,ENGLAND

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 03期

关键词：

D O I：

10.1049/ip-i-1.1980.0026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 139

页数：3

共 12 条

[1]

CLARK DH, UNPUBLISHED

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LECONTELLEC, M ;

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PELOUS, GP ;

RICHARD, J .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :807-808

[3] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].

FRITZSCHE, D .

ELECTRONICS LETTERS, 1978, 14 (03) :51-52

[4]

FRITZSCHE D, 1980, 50 I PHYS C SER

[5] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J].

KAMIMURA, K ;

SAKAI, Y .

THIN SOLID FILMS, 1979, 56 (1-2) :215-223

[6]

KAWAKAMI T, 1979, 50 I PHYS C SER, V15, P502

[7] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[8] DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS [J].

LILE, DL ;

COLLINS, DA .

THIN SOLID FILMS, 1979, 56 (1-2) :225-234

[9] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407

[10] IN P-LANGMUIR-FILM MISFET [J].

ROBERTS, GG ;

PANDE, KP ;

BARLOW, WA .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (06) :169-175

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