STRUCTURE AND LATERAL DIFFUSION OF OHMIC CONTACTS IN ALGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTORS AND GAAS DEVICES

被引:12
作者
LANGER, DW [1 ]
EZIS, A [1 ]
RAI, AK [1 ]
机构
[1] UNIVERSAL ENERGY SYST,DAYTON,OH 45432
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.583767
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1030 / 1032
页数:3
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