REDISTRIBUTION OF ALUMINUM IN MODFET OHMIC CONTACTS

被引：11

作者：

CHRISTOU, A

PAPANICOLAOU, N

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

ALUMINUM AND ALLOYS - Electric Properties - ELECTRIC CONTACTS; OHMIC;

D O I：

10.1016/0038-1101(86)90038-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts consisting of AuGe on MODFETs have been investigated as a function of sintering temperature. It is shown that aluminum from the GaAlAs layers is redistributed to the top contact surface. AES sputter profiles also show the distribution of Ge toward the GaAs substrate. Minimum values of source resistance and contact resistivity have been determined.

引用

页码：189 / 192

页数：4

共 13 条

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