DISORDER EFFECTS ON OPTICAL-SPECTRA AND BAND-STRUCTURE OF SI INDUCED BY ION-IMPLANTATION

被引：20

作者：

HE, XF ^{[1
]}

JIANG, RR ^{[1
]}

CHEN, RX ^{[1
]}

MO, D ^{[1
]}

机构：

[1] ZHONGSHAN UNIV,INST MICROELECTR,GUANGZHOU 510275,PEOPLES R CHINA

来源：

关键词：

D O I：

10.1063/1.343714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5261 / 5266

页数：6

共 52 条

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HE, XF .

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[29]

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[30]

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