DISORDER EFFECTS ON OPTICAL-SPECTRA AND BAND-STRUCTURE OF SI INDUCED BY ION-IMPLANTATION

被引：20

作者：

HE, XF ^{[1
]}

JIANG, RR ^{[1
]}

CHEN, RX ^{[1
]}

MO, D ^{[1
]}

机构：

[1] ZHONGSHAN UNIV,INST MICROELECTR,GUANGZHOU 510275,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5261 / 5266

页数：6

共 52 条

[31] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY [J].

JELLISON, GE ;

MODINE, FA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3745-3753

[32]

KISHINO S, 1973, J JPN SOC APPL PHY S, V42, P118

[33] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J].

LARSON, BC ;

BARHORST, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3181-3185

[34] THE WAVELENGTH MODULATION SPECTRUM OF ION-IMPLANTED SILICON [J].

LUE, JT ;

SHAW, SY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5617-5620

[35] INTERSPECIMEN COMPARISON OF REFRACTIVE INDEX OF FUSED SILICA [J].

MALITSON, IH .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1965, 55 (10P1) :1205-&

[36]

MASTERS BJ, 1971, ION IMPLANTATION, P81

[37] OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON [J].

MIYAO, M ;

MIYAZAKI, T ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) :955-956

[38]

Mo D., 1983, CHIN J INSTRUM METER, V4, P440

[39]

Mo Dang, 1986, Chinese Physics Letters, V3, P229, DOI 10.1088/0256-307X/3/5/010

[40] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J].

MOREHEAD, FF ;

CROWDER, BL ;

TITLE, RS .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1112-&

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