CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC

被引：9

作者：

KITTLER, M ^{[1
]}

LARZ, J ^{[1
]}

MORGENSTERN, G ^{[1
]}

SEIFERT, W ^{[1
]}

机构：

[1] INST HALBLEITERPHYS,W-1200 FRANKFURT,GERMANY

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C6期

关键词：

D O I：

10.1051/jp4:1991626

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents diffusion-length and contrast data for large-grained polycrystalline silicon. Rapid thermal annealing was observed to improve the material quality whereas conventional annealing in evacuated quartz ampoules made the material worse. Evidence for significant potential barriers and conduction at certain grain boundaries and for gettering action of defects was found.

引用

页码：173 / 179

页数：7

共 7 条

[1] DEPTH PROFILING OF THE MINORITY-CARRIER DIFFUSION LENGTH IN INTRINSICALLY GETTERED SILICON BY ELECTRON-BEAM-INDUCED CURRENT [J].