CHANNELING EFFECTS IN HIGH-ENERGY ION-IMPLANTATION - SI(N)

被引：4

作者：

BERTI, M ^{[1
]}

BRUSATIN, G ^{[1
]}

CARNERA, A ^{[1
]}

GASPAROTTO, A ^{[1
]}

FABBRI, R ^{[1
]}

机构：

[1] IST LAMEL,CNR,I-40126 BOLOGNA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)96076-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Nitrogen implantation in Si single crystals in the 600-1400 keV energy range in random, [100] and [110] alignment conditions was performed. The 6 X 10(13)-2 X 10(16) fluence range was investigated. Double crystal diffraction (DCD) and RBS-channeling analysis were performed in order to extract the damage profiles and the damage production rate as a function of the implanted ion fluence. A strong dependence of the damage on the implantation geometry has been observed and discussed.

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收藏

页码：58 / 61

页数：4

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