RADIATION-DAMAGE AND AMORPHIZATION OF SILICON BY 2 MEV NITROGEN ION-IMPLANTATION

被引：32

作者：

LINDNER, JKN

ZUSCHLAG, R

TEKAAT, EH

机构：

[1] Institute of Physics, University of Dortmund, W-4600 Dortmund 50

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 62卷 / 03期

关键词：

D O I：

10.1016/0168-583X(92)95248-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Radiation damage and amorphization of (111) silicon after 2 MeV N-14 ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10(13)-5 x 10(17) N/cm3 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by a model [N. Hecking et al., Nucl. Instr, and Meth. B15 (1986) 760]. A comparison of model parameters for N and heavier ions yields insight in the different weights of defect production and interaction processes involved. A favoring influence of N on the defect stabilization and the amorphization is discussed.

引用

页码：314 / 318

页数：5

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