RADIATION-DAMAGE AND AMORPHIZATION OF SILICON BY 6 MEV NI ION-IMPLANTATION

被引：27

作者：

LINDNER, JKN

DOMRES, R

TEKAAT, EH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90793-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：306 / 310

页数：5

共 16 条

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[9] RANGE AND DAMAGE PROFILING AFTER HEAVY-ION IMPLANTATION IN MEV REGION [J].

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