ACCURACY IN X-RAY ROCKING-CURVE ANALYSIS AS A NECESSARY REQUIREMENT FOR REVEALING VACANCIES AND INTERSTITIALS IN REGROWN SILICON LAYERS AMORPHIZED BY ION-IMPLANTATION

被引：28

作者：

SERVIDORI, M

CEMBALI, F

机构：

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1988年 / 21卷 / 02期

关键词：

Many useful discussions with Dr A. M. Mazzone are acknowledged. This work was partly supported by CNR-Progetto Finalizzato Materiali e Componenti Elettronici a Stato Solido;

D O I：

10.1107/S0021889887011233

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：176 / 181

页数：6

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