STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPLANTED IN PREAMORPHIZED SILICON LAYERS

被引：11

作者：

CEMBALI, F ^{[1
]}

SERVIDORI, M ^{[1
]}

SOLMI, S ^{[1
]}

SOUREK, Z ^{[1
]}

WINTER, U ^{[1
]}

ZAUMSEIL, P ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 98卷 / 02期

关键词：

D O I：

10.1002/pssa.2210980222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：511 / 516

页数：6

共 6 条

[1] LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS [J].

CELOTTI, G ;

NOBILI, D ;

OSTOJA, P .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (05) :821-828

[2] DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].

CEMBALI, F ;

SERVIDORI, M ;

ZANI, A .

SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&

[3] STRAIN PROFILES IN ION-DOPED SILICON OBTAINED FROM X-RAY ROCKING CURVES [J].

KYUTT, RN ;

PETRASHEN, PV ;

SOROKIN, LM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02) :381-389

[4] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J].

LARSON, BC ;

BARHORST, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3181-3185

[5] ON THE INCREASED SENSITIVITY OF X-RAY ROCKING CURVE MEASUREMENTS BY TRIPLE-CRYSTAL DIFFRACTOMETRY [J].

ZAUMSEIL, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (01) :K31-K33

[6]

ZAUMSEIL P, UNPUB

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