DOPING OF AMORPHOUS SILICON BY ALKALI-ION IMPLANTATIONS

被引：37

作者：

SPEAR, WE ^{[1
]}

LECOMBER, PG ^{[1
]}

KALBITZER, S ^{[1
]}

MULLER, G ^{[1
]}

机构：

[1] MAX PLANCK INST NUCL PHYS,D-6900 HEIDELBERG,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 02期

关键词：

D O I：

10.1080/13642817908246345

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The implantation of Na, K and Cs ions into films of a-Si prepared by the glow- discharge technique has been investigated. It is found that the range of control of conductivity that can be achieved with these ions in hot implantations is the same as that from substitutional doping by P atoms. The efficiency of Na-, K- and Cs-interstitial doping lies between that of P doping from the gas phase and from implantation. The electrical properties of Na-, K- and Cs-implanted specimens are thermally stable up to about 400°C, whereas those of Li-doped specimens showed rapidly increasing changes even after short annealing at 250°C. Preliminary thermoelectric power measurements confirm that the doped specimens are n-type and also that the changes in conductivity with implantation arise from a shift of the Fermi energy towards єe rather than from hopping paths associated with introduced defects. © 1979 Taylor & Francis Ltd.

引用

页码：159 / 165

页数：7

共 10 条

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