DIFFRACTION PROFILE ANALYSIS FOR EPITAXIAL-GROWTH ON FCC(100) SUBSTRATES - DIFFUSIONLESS MODELS

被引:8
作者
KANG, HC
FLYNNSANDERS, DK
THIEL, PA
EVANS, JW
机构
[1] IOWA STATE UNIV SCI & TECHNOL,DEPT CHEM,AMES,IA 50011
[2] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS & MATH,AMES,IA 50011
[3] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011
基金
美国国家科学基金会;
关键词
D O I
10.1016/0039-6028(91)91215-J
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We develop a kinematic theory to determine surface-sensitive diffracted intensity profiles for epitaxial growth on fcc(100) substrates. On such surfaces, atoms adsorb in fourfold hollow sites (thereby continuing the fcc lattice) rather than in on-top sites (which would create a simple cubic lattice). In a kinematic theory, the "scattering units" are most appropriately taken as vertical columns of atoms, and multiple-scattering between these is ignored. For fcc growth, the tops of these columns are exposed to various degrees, so differing scattering factors are naturally assigned. For systems with weak short-range order, this produces significant differences from behavior analyzed previously for simple cubic geometries. For example, layer-by-layer growth with random partially filled layers yields diffracted intensities with vanishing Bragg intensities at non-half-monolayer coverages and non-uniform background profiles. Our focus is on the determination of the diffuse background profile for two models of epitaxial growth at low temperatures where thermal diffusion is inoperative. Our calculations agree well with experimental LEED data for Pd/Pd(100) and Pt/Pd(100), though some unresolved questions remain.
引用
收藏
页码:205 / 215
页数:11
相关论文
共 29 条
[1]   INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW B, 1987, 36 (17) :9312-9314
[2]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) OSCILLATIONS AT 77-K [J].
EGELHOFF, WF ;
JACOB, I .
PHYSICAL REVIEW LETTERS, 1989, 62 (08) :921-924
[3]   ATOMIC VIEW OF ADSORPTION [J].
EHRLICH, G .
BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (04) :349-+
[4]   LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMS [J].
EVANS, JW ;
SANDERS, DE ;
THIEL, PA ;
DEPRISTO, AE .
PHYSICAL REVIEW B, 1990, 41 (08) :5410-5413
[5]   RANDOM-DEPOSITION MODELS FOR THIN-FILM EPITAXIAL-GROWTH [J].
EVANS, JW .
PHYSICAL REVIEW B, 1989, 39 (09) :5655-5664
[6]   MODELING OF EPITAXIAL THIN-FILM GROWTH ON FCC(100) SUBSTRATES AT LOW-TEMPERATURES [J].
EVANS, JW .
VACUUM, 1990, 41 (1-3) :479-481
[7]   FACTORS MEDIATING SMOOTHNESS IN EPITAXIAL THIN-FILM GROWTH [J].
EVANS, JW .
PHYSICAL REVIEW B, 1991, 43 (05) :3897-3905
[8]   INFLUENCE OF ADSORPTION-SITE GEOMETRY AND DIFFUSION ON THIN-FILM GROWTH - PT/PD(100) [J].
EVANS, JW ;
FLYNN, DK ;
THIEL, PA .
ULTRAMICROSCOPY, 1989, 31 (01) :80-86
[9]  
EVANS JW, 1991, STRUCTURE SURFACES, V3
[10]   DIFFUSION PATH FOR AN AL ADATOM ON AL(001) [J].
FEIBELMAN, PJ .
PHYSICAL REVIEW LETTERS, 1990, 65 (06) :729-732