ION-IMPLANTED ZN DIFFUSION AND IMPURITY-INDUCED DISORDERING OF AN ALGAAS SUPERLATTICE

被引：28

作者：

ZUCKER, EP ^{[1
]}

HASHIMOTO, A ^{[1
]}

FUKUNAGA, T ^{[1
]}

WATANABE, N ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,RES LAB,HACHIOJI,TOKYO 193,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.100932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 566

页数：3

共 14 条

[1] CAMRAS MD, 1983, 1982 INT S GAAS REL, P233
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[3] FABRICATION OF INDEX-GUIDED ALGAAS MULTIQUANTUM WELL LASERS WITH BURIED OPTICAL GUIDE BY SI-INDUCED DISORDERING
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L690 - L692
[4] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[5] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES
LEE, JW
LAIDIG, WD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 147 - 165
[6] IMPLANTATION ENERGY-DEPENDENCE OF COMPOSITIONAL DISORDERING IN SI IMPLANTED GAAS/ALGAAS SUPERLATTICES STUDIED BY SECONDARY ION MASS-SPECTROMETRY
MATSUI, K
KOBAYASHI, J
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ISHIDA, K
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L651 - L653
[7] KINETICS OF SILICON-INDUCED MIXING OF ALAS-GAAS SUPERLATTICES
MEI, P
YOON, HW
VENKATESAN, T
SCHWARZ, SA
HARBISON, JP
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1823 - 1825
[8] ALGAAS/GAAS MULTIQUANTUM WELL LASERS WITH BURIED MULTIQUANTUM WELL OPTICAL GUIDE
SEMURA, S
OHTA, T
KURODA, T
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L548 - L550
[9] DESTRUCTION MECHANISM OF III-V COMPOUND QUANTUM-WELL STRUCTURES DUE TO IMPURITY DIFFUSION
TAN, TY
GOSELE, U
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1841 - 1845
[10] MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GAAS
TAN, TY
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1240 - 1242

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