MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GAAS

被引：138

作者：

TAN, TY ^{[1
]}

GOSELE, U ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1240 / 1242

页数：3

共 29 条

[1] FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM-ARSENIDE [J].

BALL, RK ;

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05) :1299-1314

[2] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].

CAMRAS, MD ;

HOLONYAK, N ;

HESS, K ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187

[3] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[4] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[5] LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES [J].

DEPPE, DG ;

HOLONYAK, N ;

HSIEH, KC ;

GAVRILOVIC, P ;

STUTIUS, W ;

WILLIAMS, J .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :581-583

[6] INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS [J].

DUHAMEL, N ;

HENOC, P ;

ALEXANDRE, F ;

RAO, EVK .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :49-51

[7] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].

FLEMING, RM ;

MCWHAN, DB ;

GOSSARD, AC ;

WIEGMANN, W ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363

[8] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[9] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[10] ION-SPECIES DEPENDENCE OF INTERDIFFUSION IN ION-IMPLANTED GAAS-ALAS SUPERLATTICES [J].

HIRAYAMA, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11) :1498-1502

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