A RELATION BETWEEN EL2 (EC-0.81 EV) AND EL6 (EC-0.35 EV) IN ANNEALED HB-GAAS BY HYDROGEN PLASMA EXPOSURE

被引：15

作者：

CHO, HY

KIM, EK

MIN, SK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3038 / 3041

页数：4

共 28 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[2] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[3] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS) STUDY FOR MIDGAP LEVELS IN HB-GAAS BY RAPID THERMAL ANNEALING [J].

CHO, HY ;

KIM, EK ;

MIN, SK ;

CHOH, SH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (04) :359-363

[4] CREATION OF DEEP LEVELS IN HORIZONTAL BRIDGMAN-GROWN GAAS BY HYDROGENATION [J].

CHO, HY ;

KIM, EK ;

MIN, SK ;

KIM, JB ;

JANG, J .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :856-858

[5]

CHO HY, 1988, NEW PHYS KOREAN PHYS, V28, P740

[6]

CHO HY, 1989, J KOREAN PHYS SOC, V22, P67

[7]

CHO HY, IN PRESS PHYS REV B

[8]

CHO HY, 1988, KOREAN APPL PHYS, V1, P132

[9] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J].

CORBETT, JW ;

SAHU, SN ;

SHI, TS ;

SNYDER, LC .

PHYSICS LETTERS A, 1983, 93 (06) :303-304

[10] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

DABROWSKI, J ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

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