ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS) STUDY FOR MIDGAP LEVELS IN HB-GAAS BY RAPID THERMAL ANNEALING

被引：9

作者：

CHO, HY ^{[1
]}

KIM, EK ^{[1
]}

MIN, SK ^{[1
]}

CHOH, SH ^{[1
]}

机构：

[1] KOREA UNIV, INST BASIC SCI, SEOUL 136-701, SOUTH KOREA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 04期

关键词：

D O I：

10.1007/BF00618899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：359 / 363

页数：5

共 21 条

[1] A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS [J].

AURET, FD ;

LEITCH, AWR ;

VERMAAK, JS .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :158-163

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[3]

CHO HY, 1987, J KOREAN PHYS SOC, V30, P379

[4]

HASEGAWA F, 1986, SEMIINSULATING, V3, P403

[5]

KIM CK, 1986, B KOREAN PHYS SOC, V4, P130

[6]

KUHN KJ, 1986, SEMIINSULATING, V3, P373

[7] STUDY OF ELECTRON TRAPS IN N-GAAS RESULTING FROM INFRARED RAPID THERMAL ANNEALING [J].

KUZUHARA, M ;

NOZAKI, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3131-3136

[8]

LAGOWSKI J, 1982, APPL PHYS LETT, V40, P432

[9] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

[10] ABNORMAL-BEHAVIOR OF MIDGAP ELECTRON TRAP IN HB-GAAS DURING THERMAL ANNEALING [J].

MIN, SK ;

KIM, EK ;

CHO, HY .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4422-4425

← 1 2 3 →