PHOTOIRRADIATION EFFECT ON PHOTOLUMINESCENCE FROM ANODIZED POROUS SILICONS AND LUMINESCENCE MECHANISM

被引：37

作者：

SUEMUNE, I

NOGUCHI, N

YAMANISHI, M

机构：

[1] Hiroshima University, Higashi-Hiroshima, 724

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期

关键词：

POROUS SILICON; ANODIZATION; PHOTOIRRADIATION; QUANTUM SIZE EFFECT; PHOTOLUMINESCENCE; OXIDATION;

D O I：

10.1143/JJAP.31.L494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoirradiation effect on photoluminescence (PL) from anodized porous silicons was studied. Although PL from Si anodized in artificial light decreased with photoirradiation, PL from Si anodized in the dark was found to increase with photoirradiation in air. The main factor for the photoirradiation effect was attributed to oxidation in the surface layer by transmission infrared spectroscopy. During the temporal spectral change in the Si samples anodized in the dark, discrete PL peaks were observed. These PL peaks were excellently modeled by a quantum size effect. The observed blue shift of the PL spectra is interpreted to be due to the reduction of the microparticle size in the topmost amorphous layer with oxidation.

引用

页码：L494 / L497

页数：4

共 11 条

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