HYDROGEN DESORPTION-KINETICS FROM THE GROWING SI(100) SURFACE DURING SILANE GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：16

作者：

KIM, KJ

SUEMITSU, M

MIYAMOTO, N

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (theta) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/theta(n) should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.

引用

页码：3358 / 3360

页数：3

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