ELECTRON MOBILITY IN GE, SI, AND GAP

[51] ELECTRON TRANSPORT IN INSB, INAS AND INP [J]. PHYSICAL REVIEW B, 1971, 3 (10): : 3287 - &

[52] SAMOILOVICH A, 1961, DOKL AKAD NAUK SSSR+, V139, P355

[53] SAMOILOVICH AG, 1962, SOV PHYS DOKL, V6, P606

[54] SHMARTSEV YV, 1970, SOV PHYS SEMICOND+, V3, P1425

[55] SHMARTSEV YV, 1969, FIZ TEKH POLUPROV, V3, P1601

[56] INTERVALLEY SCATTERING SELECTION RULES FOR SI AND GE [J]. PHYSICA STATUS SOLIDI, 1970, 37 (01): : K47 - +

[57] ENERGY-BAND STRUCTURE OF BES, BESE, AND BETE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1852 - &

[58] ELECTRICAL AND OPTICAL PROPERTIES OF VAPOR-GROWN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5404 - &

[59] ELECTRON MOBILITY AND IMPURITY CONCENTRATION IN N-GAP CRYSTALS GROWN BY SLOW COOLING OF GA SOLUTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) : 358 - &

[60] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &

[51] ELECTRON TRANSPORT IN INSB, INAS AND INP [J]. PHYSICAL REVIEW B, 1971, 3 (10): : 3287 - &

[52] SAMOILOVICH A, 1961, DOKL AKAD NAUK SSSR+, V139, P355

[53] SAMOILOVICH AG, 1962, SOV PHYS DOKL, V6, P606

[54] SHMARTSEV YV, 1970, SOV PHYS SEMICOND+, V3, P1425

[55] SHMARTSEV YV, 1969, FIZ TEKH POLUPROV, V3, P1601

[56] INTERVALLEY SCATTERING SELECTION RULES FOR SI AND GE [J]. PHYSICA STATUS SOLIDI, 1970, 37 (01): : K47 - +

[57] ENERGY-BAND STRUCTURE OF BES, BESE, AND BETE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1852 - &

[58] ELECTRICAL AND OPTICAL PROPERTIES OF VAPOR-GROWN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5404 - &

[59] ELECTRON MOBILITY AND IMPURITY CONCENTRATION IN N-GAP CRYSTALS GROWN BY SLOW COOLING OF GA SOLUTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) : 358 - &

[60] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &