AL0.25GA0.75AS IN0.25GA0.75AS PSEUDOMORPHIC MODFET WITH HIGH DC AND RF PERFORMANCE

被引：2

作者：

DICKMANN, J ^{[1
]}

GEYER, A ^{[1
]}

DAEMBKES, H ^{[1
]}

NICKEL, H ^{[1
]}

LOSCH, R ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] DBP TELEKOM,RES CTR,W-6100 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; MICROWAVE DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS; TRANSISTORS;

D O I：

10.1049/el:19910315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/InGaAs MODFETs having 25% indium in the channel and L(G) = 0.35-mu-m have been fabricated. From DC device characterisation, a maximum saturation current of 670mA/mm and an extrinsic transconductance of 500 mS/mm have been measured. A maximum unilateral gain cutoff frequency of f(c) = 205 GHz and a maximum current gain cutoff frequency of f(T) = 86 GHz have been achieved. Bias dependence of f(c) and f(T) has been measured. At 12 GHz a minimum noise figure of NF = 0.8 dB and an associated gain of 11 dB have been measured.

引用

页码：501 / 502

页数：2

共 7 条

[1] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].