GAAS VERTICAL-CAVITY SURFACE EMITTING LASERS FABRICATED BY REACTIVE ION ETCHING

被引：35

作者：

CHOQUETTE, KD ^{[1
]}

HASNAIN, G ^{[1
]}

WANG, YH ^{[1
]}

WYNN, JD ^{[1
]}

FREUND, RS ^{[1
]}

CHO, AY ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

机构：

[1] AT&T BELL LABS,STC,BREINIGSVILLE,PA 18031

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 10期

关键词：

D O I：

10.1109/68.93241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on GaAs quantum well vertical-cavity surface emitting lasers fabricated using low damage reactive ion etching. Lasers which are partially and completely etched through their structure are compared. The surface recombination velocity of exposed GaAs is not exacerbated in deep etched lasers; other loss mechanisms in shallow etched lasers have comparable impact on laser performance. Etched lasers exhibit low voltage and small differential series resistance at threshold, while devices fabricated by a combination of etching and ion implantation possess lower threshold current. We find reactive ion etching has little additional effect on laser operation, whereas the different device structures considered do influence laser performance.

引用

页码：859 / 862

页数：4

共 17 条

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].