COMMENTS ON BARRIER CHANGES IN STRESSED METAL-SEMICONDUCTOR CONTACTS

被引：1

作者：

FONASH, SJ ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI DEPT,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1663013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：496 / 498

页数：3

共 15 条

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