RESIDUAL ACCEPTOR ASSESSMENT IN AS-GROWN BULK GAAS BY RAMAN AND SELECTIVE PAIR LUMINESCENCE SPECTROSCOPY - A COMPARATIVE-STUDY

被引：19

作者：

WAGNER, J

RAMSTEINER, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 20期

关键词：

D O I：

10.1063/1.97327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1369 / 1371

页数：3

共 7 条

[1]

CHANG RK, 1982, LIGHT SCATTERING SOL, V2, P179

[2] SELECTIVE EXCITATION LUMINESCENCE IN BULK-GROWN GAAS [J].

HUNTER, AT ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :169-171

[3] DEEP CENTER EL2 AND ANTI-STOKES LUMINESCENCE IN SEMI-INSULATING GAAS [J].

JOHNSON, EJ ;

KAFALAS, J ;

DAVIES, RW ;

DYES, WA .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :993-995

[4] UP CONVERSION OF LUMINESCENCE VIA DEEP CENTERS IN HIGH-PURITY GAAS AND GAALAS EPITAXIAL LAYERS [J].

QUAGLIANO, LG ;

NATHER, H .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :555-557

[5] OPTICALLY INDUCED FAR-INFRARED ABSORPTION FROM RESIDUAL ACCEPTORS IN AS-GROWN GAAS [J].

WAGNER, J ;

SEELEWIND, H ;

KOIDL, P .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1080-1082

[6] RAMAN-SCATTERING AS A QUANTITATIVE TOOL FOR RESIDUAL ACCEPTOR ASSESSMENT IN SEMIINSULATING GAAS [J].

WAGNER, J ;

SEELEWIND, H ;

KAUFMANN, U .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1054-1056

[7] ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN SEMI-INSULATING GAAS [J].

WAN, K ;

BRAY, R .

PHYSICAL REVIEW B, 1985, 32 (08) :5265-5274

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