ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN SEMI-INSULATING GAAS

被引：47

作者：

WAN, K

BRAY, R

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5265 / 5274

页数：10

共 26 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].

BALDERES.A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539

[3] RAMAN STUDIES OF ZN ACCEPTOR IN GAP [J].

CHASE, LL ;

HAYES, W ;

RYAN, JF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (15) :2957-2966

[4] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J].

CHERLOW, JM ;

AGGARWAL, RL ;

LAX, B .

PHYSICAL REVIEW B, 1973, 7 (10) :4547-4560

[5] CORRECTION [J].

CHERLOW, JM .

PHYSICAL REVIEW B, 1974, 9 (08) :3633-3633

[6] RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN GE [J].

DOEHLER, J .

PHYSICAL REVIEW B, 1975, 12 (08) :2917-2931

[7]

Hayes W., 1978, SCATTERING LIGHT CRY

[8] ELECTRONIC RAMAN SCATTERING BY ACCEPTORS IN GAP [J].

HENRY, CH ;

HOPFIELD, JJ ;

LUTHER, LC .

PHYSICAL REVIEW LETTERS, 1966, 17 (23) :1178-&

[9] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

YU, PW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :949-955

[10] SELECTIVE EXCITATION LUMINESCENCE IN BULK-GROWN GAAS [J].

HUNTER, AT ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :169-171

← 1 2 3 →