CHALCOGENS IN GERMANIUM

被引：51

作者：

GRIMMEISS, HG

MONTELIUS, L

LARSSON, K

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.37.6916

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6916 / 6928

页数：13

共 28 条

[1] STATISTICAL-MECHANICS OF ELECTRONIC-ENERGY LEVELS IN SEMICONDUCTORS [J].

ALMBLADH, CO ;

REES, GJ .

SOLID STATE COMMUNICATIONS, 1982, 41 (02) :173-176

[2]

EMTSEV VV, 1978, SOV PHYS SEMICOND+, V12, P78

[3] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[4] THE IONIZATION BEHAVIOR OF DONORS FORMED FROM OXYGEN IN GERMANIUM [J].

FULLER, CS ;

DOLEIDEN, FH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :251-260

[5]

GLINCHUCK KD, 1962, SOV PHYS SOLID STATE, V5, P690

[6] EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE [J].

GRIMMEISS, HG ;

SKARSTAM, B .

PHYSICAL REVIEW B, 1981, 23 (04) :1947-1960

[7] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].

GRIMMEISS, HG ;

OVREN, C .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09) :1032-1042

[8] HYDROGEN-LIKE EXCITED-STATES OF A DEEP DONOR IN GERMANIUM [J].

GRIMMEISS, HG ;

LARSSON, K ;

MONTELIUS, L .

SOLID STATE COMMUNICATIONS, 1985, 54 (10) :863-865

[9] PHYSICS OF ULTRA-PURE GERMANIUM [J].

HALLER, EE ;

HANSEN, WL ;

GOULDING, FS .

ADVANCES IN PHYSICS, 1981, 30 (01) :93-138

[10]

IGNATKOV VD, 1962, SOV PHYS-SOL STATE, V4, P1193

← 1 2 3 →