SPONTANEOUS AND STIMULATED RECOMBINATION IN P+-N-N+ (ALGA)AS-GAAS HETEROJUNCTION LASER-DIODES

被引：23

作者：

KRESSEL, H ^{[1
]}

LOCKWOOD, HF ^{[1
]}

NICOLL, FH ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1973年 / QE 9卷 / 02期

关键词：

D O I：

10.1109/JQE.1973.1077456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：383 / 387

页数：5

相关论文

共 14 条

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5
[2] BASOV NG, 1966, SOV PHYS DOKL, V11, P522
[3] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
SHIH, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
[4] COMMON OCCURENCE OF ARTIFACTS OR GHOST PEAKS IN SEMICONDUCTOR INJECTION ELECTROLUMINESCENCE SPECTRA
CARR, WN
BIARD, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2776 - &
[5] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES
DOW, JD
REDFIELD, D
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 594 - +
[6] JOHNSTON WD, 1972, 7 INT QUANT EL C DIG, P14
[7] LASING TRANSITIONS IN P+-N-N+(ALGA)AS-GAAS HETEROJUNCTION LASERS
KRESSEL, H
LOCKWOOD, HF
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 175 - &
[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[9] FAR-FIELD PATTERNS OF ELECTRON-BEAM PUMPED SEMICONDUCTOR LASERS
NICOLL, FH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) : 198 - &
[10] PANKOVE JI, 1965, PHYS REV, V140, P2059