ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXY

被引：1

作者：

BARNETT, SA

GREENE, JE

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

[2] LINKOPING UNIV,S-58183 LINKOPING,SWEDEN

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1989年 / 41卷 / 04期

关键词：

D O I：

10.1007/BF03220192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：16 / 19

页数：4

共 22 条

[1] ADSORPTION OF ZN ON GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1973, 38 (02) :394-412

[2] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

BARNETT, SA ;

GREENE, JE .

SURFACE SCIENCE, 1985, 151 (01) :67-90

[3] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE [J].

BEAN, JC ;

DINGLE, R .

APPLIED PHYSICS LETTERS, 1979, 35 (12) :925-927

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[5] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].

GOSSARD, AC ;

PETROFF, PM ;

WEIGMANN, W ;

DINGLE, R ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325

[6] MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES [J].

GREENE, JE ;

BARNETT, SA ;

ROCKETT, A ;

BAJOR, G .

APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :520-544

[7] GROWTH OF SINGLE-CRYSTAL GAAS AND METASTABLE (GASB)1-XGEX ALLOYS BY SPUTTER DEPOSITION - ION-SURFACE INTERACTION EFFECTS [J].

GREENE, JE ;

BARNETT, SA ;

CADIEN, KC ;

RAY, MA .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :389-401

[8] A LOW-ENERGY METAL-ION SOURCE FOR PRIMARY ION DEPOSITION AND ACCELERATED ION DOPING DURING MOLECULAR-BEAM EPITAXY [J].

HASAN, MA ;

KNALL, J ;

BARNETT, SA ;

ROCKETT, A ;

SUNDGREN, JE ;

GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1332-1339

[9] INCORPORATION OF ACCELERATED LOW-ENERGY (50-500 EV) IN+ IONS IN SI(100) FILMS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

HASAN, MA ;

KNALL, J ;

BARNETT, SA ;

SUNDGREN, JE ;

MARKERT, LC ;

ROCKETT, A ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) :172-179

[10] BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE [J].

IIMURA, Y ;

KAWABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L81-L84

← 1 2 3 →