ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXY

被引：1

作者：

BARNETT, SA

GREENE, JE

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

[2] LINKOPING UNIV,S-58183 LINKOPING,SWEDEN

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1989年 / 41卷 / 04期

关键词：

D O I：

10.1007/BF03220192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：16 / 19

页数：4

共 22 条

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[18] A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY [J].

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[20] SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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