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MOLECULAR-BEAM EPITAXIAL-GROWTH OF NITROGEN-DOPED ZNSE WITH ION DOPING TECHNIQUE
被引:37
作者
:
OHKAWA, K
论文数:
0
引用数:
0
h-index:
0
OHKAWA, K
MITSUYU, T
论文数:
0
引用数:
0
h-index:
0
MITSUYU, T
YAMAZAKI, O
论文数:
0
引用数:
0
h-index:
0
YAMAZAKI, O
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1988年
/ 86卷
/ 1-4期
关键词
:
D O I
:
10.1016/0022-0248(90)90738-7
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:329 / 334
页数:6
相关论文
共 8 条
[1]
IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
FITZPATRICK, BJ
论文数:
0
引用数:
0
h-index:
0
FITZPATRICK, BJ
BHARGAVA, RN
论文数:
0
引用数:
0
h-index:
0
BHARGAVA, RN
[J].
PHYSICAL REVIEW B,
1983,
27
(04)
: 2419
-
2428
[2]
PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY ION DOPING
MITSUYU, T
论文数:
0
引用数:
0
h-index:
0
MITSUYU, T
OHKAWA, K
论文数:
0
引用数:
0
h-index:
0
OHKAWA, K
YAMAZAKI, O
论文数:
0
引用数:
0
h-index:
0
YAMAZAKI, O
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(20)
: 1348
-
1350
[3]
OHKAWA K, IN PRESS J APPL PHYS
[4]
PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
论文数:
0
引用数:
0
h-index:
0
PARK, RM
MAR, HA
论文数:
0
引用数:
0
h-index:
0
MAR, HA
SALANSKY, NM
论文数:
0
引用数:
0
h-index:
0
SALANSKY, NM
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(02)
: 1047
-
1049
[5]
CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 284
-
291
[6]
NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(03)
: 246
-
248
[7]
CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
72
(1-2)
: 31
-
40
[8]
GROWTH OF UNDOPED, HIGH-PURITY, HIGH-RESISTIVITY ZNSE LAYERS BY MOLECULAR-BEAM EPITAXY
YONEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
YONEDA, K
HISHIDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
HISHIDA, Y
TODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
TODA, T
ISHII, H
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
ISHII, H
NIINA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
NIINA, T
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(12)
: 1300
-
1302
←
1
→
共 8 条
[1]
IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
FITZPATRICK, BJ
论文数:
0
引用数:
0
h-index:
0
FITZPATRICK, BJ
BHARGAVA, RN
论文数:
0
引用数:
0
h-index:
0
BHARGAVA, RN
[J].
PHYSICAL REVIEW B,
1983,
27
(04)
: 2419
-
2428
[2]
PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY ION DOPING
MITSUYU, T
论文数:
0
引用数:
0
h-index:
0
MITSUYU, T
OHKAWA, K
论文数:
0
引用数:
0
h-index:
0
OHKAWA, K
YAMAZAKI, O
论文数:
0
引用数:
0
h-index:
0
YAMAZAKI, O
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(20)
: 1348
-
1350
[3]
OHKAWA K, IN PRESS J APPL PHYS
[4]
PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
论文数:
0
引用数:
0
h-index:
0
PARK, RM
MAR, HA
论文数:
0
引用数:
0
h-index:
0
MAR, HA
SALANSKY, NM
论文数:
0
引用数:
0
h-index:
0
SALANSKY, NM
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(02)
: 1047
-
1049
[5]
CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 284
-
291
[6]
NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
论文数:
0
引用数:
0
h-index:
0
STUTIUS, W
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(03)
: 246
-
248
[7]
CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
72
(1-2)
: 31
-
40
[8]
GROWTH OF UNDOPED, HIGH-PURITY, HIGH-RESISTIVITY ZNSE LAYERS BY MOLECULAR-BEAM EPITAXY
YONEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
YONEDA, K
HISHIDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
HISHIDA, Y
TODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
TODA, T
ISHII, H
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
ISHII, H
NIINA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn
NIINA, T
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(12)
: 1300
-
1302
←
1
→