ELECTRICAL-PROPERTIES OF SI FILMS DOPED WITH 200-EV IN+ IONS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

NOEL, JP

HIRASHITA, N

MARKERT, LC

KIM, YW

GREENE, JE

KNALL, J

NI, WX

HASAN, MA

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1189 / 1197

页数：9

共 30 条

[1]

ARFKEN G, 1985, MATH METHODS PHYSICI, P567

[2] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J].

BACKENSTOSS, G .

PHYSICAL REVIEW, 1957, 108 (06) :1416-1419

[3] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].

BAJOR, G ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1579-1582

[4] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

BARNETT, SA ;

GREENE, JE .

SURFACE SCIENCE, 1985, 151 (01) :67-90

[5] NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].

BARON, R ;

BAUKUS, JP ;

ALLEN, SD ;

MCGILL, TC ;

YOUNG, MH ;

KIMURA, H ;

WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :257-259

[6]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P360

[7]

Brooks H., 1955, ADV ELECTRON, V7, P85

[8] SUPERSHALLOW LEVELS IN INDIUM-DOPED SILICON [J].

CEROFOLINI, GF ;

PIGNATEL, GU ;

MAZZEGA, E ;

OTTAVIANI, G .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2204-2207

[9] THERMODYNAMIC AND KINETIC-PROPERTIES OF INDIUM-IMPLANTED SILICON .2. HIGH-TEMPERATURE DIFFUSION IN AN INERT ATMOSPHERE [J].

CEROFOLINI, GF ;

FERLA, G ;

PIGNATEL, GU ;

RIVA, F .

THIN SOLID FILMS, 1983, 101 (03) :275-283

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

← 1 2 3 →